Semiconductor device mounted with fuse memory

ABSTRACT

A fuse element utilizing a reaction between two layers by feeding current is manufactured. A fuse element including a first layer formed of an oxide or a nitride and a second layer that becomes high resistant by nitridation or oxidation, in which the first layer and the second layer are in contact with each other, is manufactured. For example, the fuse element is manufactured by using indium tin oxide for the first layer and aluminum for the second layer. By generating joule heat by applying voltage to the first layer and the second layer, oxygen in the indium tin oxide enters the aluminum, which changes the aluminum into aluminum oxide that presents an insulating property. The fuse element can be manufactured by a similar process as that of forming a TFT.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device including astorage element and a method of manufacturing the semiconductor device.The present invention particularly relates to a semiconductor deviceusing a fuse element as the storage element.

2. Description of the Related Art

In a society as in the present day society using many electronicappliances, a variety of data are generated or used, and storage devices(hereinafter referred to as “memory”) are necessary for storing thesedata. The variety of memories produced or used currently all haveadvantages and disadvantages, and they are used according to use or thetype of data to be handled.

The memories can be roughly classified into volatile memories andnon-volatile memories. A volatile memory is a memory whose storedcontent is lost if power is not supplied. A non-volatile memory is amemory whose stored content is retained even without a supply of power.A DRAM (Dynamic Random Access Memory), an SRAM (Static Random AccessMemory), or the like is given as the volatile memory. Although use ofthe volatile memory is very limited since the stored content is lostwhen power supply is turned off, the volatile memory is used for a cashmemory of a computer or the like because the volatile memory has shortaccess time. Further, although increase in capacity is easy with theDRAM since its memory cell is small, a controlling method is complex andpower consumption is high. Furthermore, although a memory cell of theSRAM includes a CMOS and a manufacturing process and control method areeasy, it is not suitable for an increase in capacity because sixtransistors are necessary in one memory cell.

The non-volatile memories whose storage contents are retained without asupply of power can be roughly classified into three categories, whichare a rewritable type, a write-once type, and a mask-ROM (Read OnlyMemory). In the rewritable type, stored content can be rewritten withina limited number of times it can be rewritten. In the write-once type, auser of the memory can write in data only once. In the mask ROM, datacontent is set during manufacturing and the data content cannot berewritten.

As the re-writable nonvolatile memory, an EPROM, flash memory,ferroelectric memory, or the like is given. Writing operation of theEPROM is easy and unit price is relatively low, but a dedicatedprogramming device and erasing device are necessary for writing anderasing. In the flash memory or ferroelectric memory, rewriting can bedone over a substrate that is used, and it has short access time as wellas low power consumption; however, unit price per bit is high because astep of building-in a floating gate or a ferroelectric layer duringmanufacturing is necessary.

A memory cell of a write-once nonvolatile memory includes a fuse oranti-fuse, a cross pointer diode, an OLED (Organic Light EmittingDiode), a bistable liquid crystal element, or another device whose statechanges by heat or light. Usually, data is stored by each memory cell inthe memory being in one of two states (a first state and a secondstate). In the write-once storage device, all memory cells aremanufactured to be in one state (the first state) during manufacturing,then selected memory cells are changed to the other state (the secondstate) by a writing process. This change from the first state to thesecond state is irreversible, and a memory cell that is changed oncecannot be returned to the original state.

Note that an IC tag can be given as an example of a semiconductor devicein which a memory and another functional circuit is built over asubstrate. A memory included in an IC tag is an SRAM, a mask ROM, aflash memory, a ferroelectric memory, or the like. Since data content isset during manufacturing memories in the mask ROM, a user of the IC tagcannot write in data. Further, since one memory is necessary for onedata, when a memory of different data content is necessary, a photomaskcorresponding to each type of data becomes necessary. Accordingly, amask ROM is not practical in terms of cost.

A manufacturing process of the aforementioned write-once memory oftendiffers with those of a central processing unit (hereinafter referred toas “CPU”), an arithmetic function circuit, a rectifying circuit, acontrol circuit, and the like (these circuits are hereinafter referredto as “other functional circuits” to differentiate from the write-oncememory). Accordingly, even when the memory and TFTs forming theforegoing circuits are to be manufactured over the same substrate, it isnecessary to form them using different materials in differentmanufacturing steps.

Note that for the flash memory or ferroelectric memory, a special stepto build-in the memory, such as a step of building-in a floating gate ora ferroelectric layer in a gate insulating layer as mentioned above, isnecessary. On the other hand, circuits other than the memory formed inan IC tag can be built-in within the manufacturing process of CMOS. Thatis, the other circuits can be manufactured using a manufacturingtechnique of a TFT (Thin Film Transistor). Therefore, if a useful memorycan be manufactured by the TFT manufacturing technique, a semiconductordevice in which a memory and other functional circuits are mounted overthe same substrate can be manufactured.

That which is called an IC tag, ID chip, or the like as mentioned abovecan be manufactured by a TFT manufacturing process. In the ID chip,necessary information is stored in a storage element in the IC chip, andthe information inside is read using non-contact means, or in general,wireless communication means. By practical application of such an IDchip, commodity distribution and the like are expected to be simplified,improved in efficiency, reduced in cost, and improved in security.

The ID chip includes a memory holding portion for identifying individualinformation. The ID chip is differentiated from other ID chips accordingto the stored individual information. With this, identification of aproduct or management of stock is possible. An example of individualauthentication using an ID chip is described with reference to FIG. 4.FIG. 4 is a conceptual diagram of individual authentication by whichindividual information of a bag is read without contact. An ID chip 401storing specific individual information is provided to a bag 404 bybeing attached to the outside of the bag 404. An electromagnetic wave istransmitted to this ID chip 401 from an antenna unit 402 of areader/writer 403. When the ID chip 401 receives the transmittedelectromagnetic wave, the ID chip 401 sends individual information ofthe ID chip 401 to the antenna unit 402. The antenna unit 402 sends thereceived individual information to the reader/writer 403, and thereader/writer 403 differentiates the individual information. In thismanner, information of the bag 404 is obtained by the reader/writer 403.By using a system such as that shown in FIG. 4, distribution management,tabulation, elimination of counterfeited items, and the like becomeeasy.

As one of such techniques by which individual information is stored inindividual ID chips, there is a fuse memory element (a storage elementof a nonvolatile memory using a fuse element). A fuse memory element isa storage element that stores information by selectively applying highvoltage to a memory cell to insulate the selected place or make it be ina state of high resistance. A conventional fuse memory element isinsulated by selectively breaking a junction or by melting (For example,Patent Document 1: Japanese Published Patent Application No.2005-251183).

On the other hand, there is an anti-fuse element as an element similarto the fuse element. The anti-fuse element has high resistance in thefirst state, but by applying voltage, it transitions to the second statewith low resistance (for example, Patent Document 2: Japanese PublishedPatent Application No. Hei 5-136269).

When a junction is broken or melting is carried out as done with aconventional fuse memory element, a region with sufficient area isnecessary so that a broken junction portion or a melted portion can beinsulating for sure, which becomes a hindrance in size reduction. It isparticularly unsuited for an IC tag or the like in which miniaturizationof a pattern wiring and size reduction of a device is demanded. Also,since a structure itself changes in shape by the break of the junctionand by melting, another wiring is affected in no small measure within anelement.

Further, there are still problems with the conventional semiconductordevice such as the following. One is that when a mask ROM is used in amemory circuit, writing cannot be carried out except for during chipmanufacturing. Therefore, an ID chip to which data can be written otherthan during chip manufacturing is in demand. Also, when an EPROM(Erasable Programmable Read Only Memory) typified by an EEPROM(Electronically Erasable and Programmable Read Only Memory) is used fora memory circuit, although a user can freely rewrite content,counterfeiting is also possible since a person other then the right usercan rewrite information for authentication that should not be rewritten.This is a serious fatal flaw from a perspective of ID tag security.Accordingly, an ID chip that can only be written once for preventingsuch counterfeiting is in demand. As such memory that can only bewritten once, which maintains storage by insulating a fuse portion ormaking the fuse portion to have high resistance, there is a PROM(Programmable Read Only Memory).

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicein which information cannot be rewritten or counterfeited by a personother than the right user, by using a fuse memory element for a PROM.

Also, for many conventional storage elements, particular steps formanufacturing the storage elements are necessary. Accordingly, it isdifficult to manufacture the storage elements over the same substrate asother functional circuits. Even when the storage elements aremanufactured over the same substrate as other functional circuits, it isnecessary to add a step other than a TFT manufacturing process. Thismeans that there is extra cost in manufacturing a semiconductor devicehaving one function, for example an IC tag or the like, formanufacturing a memory. The present invention provides a fuse memoryelement manufactured over the same substrate as other functionalcircuits, using a TFT manufacturing process. Further, the presentinvention provides an easy-to-use, inexpensive semiconductor deviceincluding a storage element without limiting specifications of a productor causing reduction in productivity even when the storage element ismanufactured over the same substrate as other functional circuits.

A semiconductor device of the present invention includes a fuse elementas a storage element. A fuse memory element has a stacked-layerstructure in which a second layer including oxygen is provided over afirst layer including a substance presenting an insulating property byoxidation. By selectively applying voltage to such a stacked-layerstructure with an electromagnetic wave or by a method of directlyfeeding current, or the like, in order to make it highly electricallyresistant (desirably insulating), a desired circuit configuration isrealized.

Sheet resistance of the first layer increases by thinning its filmthickness. Sheet resistance refers to resistance per unit area. By anincrease in sheet resistance, joule heat by current feeding increases.By the increase in joule heat, oxygen is released from the second layerincluding oxygen and the oxygen is supplied to the first layer. An oxidecan be formed by the oxygen oxidizing a substance in the first layer, sothat the first layer comes to a state of insulation or high resistance.

One feature of the present invention is a fuse element in which a firstlayer and a second layer are provided to be partially or completely incontact with each other. The first layer mainly contains an oxide, anitride or an oxynitride and the second layer has a conductive propertyand mainly contains a substance that presents an insulating property byoxidation or nitridation. The second layer comes to have high resistanceby feeding current to one or both of the first layer and the secondlayer so that heat is generated and a part or the entire second layer isoxidized or nitrided.

One feature of the present invention is a fuse element including a firstlayer, a second layer provided to be partially or completely in contactwith the first layer, and a third layer selectrively provided to bepartially in contact with the first layer. The first layer mainlycontains an oxide, a nitride, or an oxynitride, and the second layer hasa conductive property and mainly contains a substance that presents aninsulating property by oxidation or nitridation. The third layer has aconductive property and forms the first electrode and the secondelectrode. The second layer comes to have high resistance by feedingcurrent between the first electrode and the second electrode so thatheat is generated and a part or the entire second layer is oxidized ornitrided.

One feature of the present invention is a fuse element including a firstlayer, a second layer provided to be partially or completely in contactwith the first layer, and a third layer selectively provided to thepartially in contact with the second layer. The first layer mainlycontains an oxide, a nitride, or an oxynitride, the second layer has aconductive property and mainly contains a substance that presents aninsulating property by oxidation or nitridation, and the third layer hasa conductive property and forms a first electrode and a secondelectrode. The second layer comes to have high resistance by feedingcurrent between the first electrode and the second electrode so thatheat is generated and a part or the entire second layer is oxidized ornitrided.

In the present invention of the foregoing structure, the first layerpreferably has a conductive property.

In the present invention of the foregoing structure, the first layerpreferably includes indium tin oxide, indium tin oxide containingsilicon oxide, or indium oxide-zinc oxide.

In the present invention of the foregoing structure, the second layerpreferably includes aluminum, bismuth, or tin.

In the present invention of the foregoing structure, it is preferablethat the first layer mainly contains indium tin oxide and the secondlayer mainly contains aluminum.

A fuse element of the present invention can be mounted to asemiconductor device.

Fuse elements of the present invention are preferably arranged in amatrix form.

It is preferable that the fuse elements of the present invention have astructure in which they are each connected to a transistor and thetransistor selects one fuse element.

Note that in the present invention, a semiconductor device refers to adevice including a circuit containing a semiconductor element (such as atransistor or diode). Also, it may refer to devices in general that canfunction by utilizing a semiconductor characteristic.

Since sufficient region for carrying out insulation for sure is notnecessary for a fuse element of the present invention, the fuse elementand a semiconductor device including the fuse element can be reduced insize. Further, since deformation of a wiring due to the fuse elementbecoming insulating or high resistant does not occur, degradation of acharacteristic of another circuit and reduction in yield due to thedegradation can be prevented.

A fuse element of the present invention can be formed by a TFTmanufacturing process; therefore, it can be formed over the samesubstrate as another circuit necessary for operation a semiconductordevice.

Since writing in a storage element using the fuse element of the presentinvention can be done only once, reliability of individualidentification information is high, and a high-security semiconductordevice can be provided.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B are diagrams showing a fuse element of the presentinvention;

FIGS. 2A to 2C are diagrams showing a fuse element of the presentinvention formed over a TFT substrate;

FIG. 3 is a diagram showing one mode of a semiconductor device of thepresent invention;

FIG. 4 is a diagram showing one mode utilizing a semiconductor device ofthe present invention;

FIG. 5 is a circuit diagram showing a semiconductor device mounted witha fuse memory of the present invention;

FIG. 6 is a circuit diagram showing a semiconductor device mounted witha fuse memory of the present invention;

FIGS. 7A to 7F are diagrams each showing an example of mounting asemiconductor device of the present invention; and

FIGS. 8A to 8C are diagrams showing a fuse element of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION Embodiment Mode

Hereinafter, embodiment modes of the present invention will be describedwith reference to drawings. However, the present invention can beembodied in many different modes and it is easily understood by thoseskilled in the art that modes and details can be variously changedwithout departing from the scope and the spirit of the presentinvention. Therefore, the present invention should not be construed asbeing limited to description of the embodiment modes.

Embodiment Mode 1

An embodiment mode of the present invention will be described withreference to FIGS. 1A and 1B. A fuse element 114 in FIG. 1A includesover a substrate 110 terminal electrode layers 111 that become terminalelectrodes; a first fuse layer 112 provided to partially or entirelycover the substrate 110 and the terminal electrode layers 111; and asecond fuse layer 113 over the first fuse layer 112. The terminalelectrode layers 111 are provided to be isolated from each other.

A substrate having an insulating property (an insulating substrate) isused for the substrate 110. For example, a glass substrate, a plasticsubstrate, or the like can be used. In this embodiment mode, a glasssubstrate is used for the substrate 110. The glass substrate used forthe substrate 110 is not particularly limited, and a quartz glasssubstrate, an alkali-free glass substrate such as a borosilicate glasssubstrate, or an alumino silicate glass substrate may be used.

Also, since it is acceptable as long as the substrate 110 has sufficientheat resistance in a manufacturing process and has an insulatingproperty on a surface, a conductive substrate or a semiconductorsubstrate with an insulating film thereover may be used.

First, the terminal electrode layers 111 of a fuse element are formedover the substrate 110. It is acceptable as long as the terminalelectrode layers 111 include a conductive substance. The terminalelectrode layers 111 are preferably provided using a substance with lowresistance, and a substance that does not inhibit formation of the firstfuse layer 112 and the second fuse layer 113 to be formed in a laterstep is used. Here, titanium may be used for example.

Next, the first fuse layer 112 is formed over the substrate 110 and theterminal electrode layers 111. A conductive oxide may be used for thefirst fuse layer 112, and ITO (indium tin oxide), IZO (indium oxidecontaining zinc oxide), zinc oxide or the like can be typically given.Also, ITSO (indium tin oxide containing silicon oxide) formed by asputtering method using a target of ITO containing 2 to 10% siliconoxide by weight may be used. Note that IZO is an oxide conductivematerial formed by a sputtering method using a target of indium oxidecontaining 2 to 20% zinc oxide by weight. Alternatively, a conductivematerial of zinc oxide doped with gallium, tin oxide, zinc oxide dopedwith gallium oxide, zinc oxide doped with aluminum oxide, or zinc oxidedoped with silicon oxide may be used. A known method may be used for theformation, and for example, a sputtering method, a CVD method, a dropletdischarging method, or the like can be given. Here, ITO is used for thefirst fuse layer 112.

Subsequently, the second fuse layer 113, which is a precursor of aninsulating oxide, is formed. The second fuse layer 113 is formed of aconductive substance that presents an insulating property when oxidized.For example, aluminum, tin, bismuth, or the like can be used. Here, thesecond fuse layer 113 is formed of aluminum. The terminal electrodelayers 111 and the first fuse layer 112 are formed to be stacked and incontact with each other. In this manner, the fuse element 114 ismanufactured (see FIG. 1A).

By applying voltage to a fuse element manufactured in the foregoingmanner, joule heat is generated. Here, since titanium, ITO, and aluminumare used for the terminal electrode layers 111, the first fuse layer112, and the second fuse layer 113, respectively, oxygen contained inthe first fuse layer 112 is diffused to the second fuse layer 113 tooxidize the second fuse layer 113. A constant-voltage power source isused for the voltage application. This is because if a constant-currentpower source is used here, the first fuse layer 112 and the second fuselayer 113 are easily short-circuited since they have low resistance, andthus joule heat is not sufficiently generated. Joule heat is generatedby gradually increasing amount of current using the constant-voltagepower supply so that the second fuse layer 113 is oxidized and becomesan insulating oxide 116. Here, the insulating oxide 116 is aluminumoxide. Also, an amount of oxygen contained in the first fuse layer 112is reduced and the first fuse layer 112 transforms into a second layer115; therefore, electrical resistance changes and favorable conductivityis not obtained (see FIG. 1B).

As described above, by using the present invention, a fuse element canbe manufactured without breaking a junction or melting a fuse.Accordingly, sufficient region for carrying out insulation that isconventionally necessary is not necessary. Therefore, the fuse elementcan be reduced in size, and a semiconductor device including the fuseelement can also be reduced in size. In addition, since deformation of awiring does not occur as it does in a case of breaking a junction ormelting a fuse, there is no effect on a wiring portion except the fuseelement, which can prevent characteristic degradation or reduction inyield, and improves reliability.

In this embodiment mode, although a conductive substance containingoxygen is used for the first fuse layer 112 and a conductive substanceof which an oxide becomes an insulating substance is used for the secondfuse layer 113, the present invention is not limited thereto, and thisstacked-layer structure may be reversed. In other words, the first fuselayer 112 may be formed of the conductive substance of which an oxidebecomes an insulating substance and the second fuse layer 113 may beformed of the conductive substance containing oxygen. However, with thisstacked-layer structure, the first fuse layer 112 becomes conductivevery easily when voltage is applied, and there is concern of a shortcircuit. Therefore, it is necessary that there is sufficient distancebetween the terminal electrodes.

Also, although the terminal electrode layers 111 and the first fuselayer 112 are formed to be in contact with each other in this embodimentmode, the present invention is not limited thereto. For example, theterminal electrode layers 111 and the second fuse layer 113 may beformed to be in contact with each other (see FIGS. 8A and 8C).Alternatively, the terminal electrode layers 111 may be formed afterforming the first fuse layer 112 and the second fuse layer 113 (seeFIGS. 8B and 8C). That is, the terminal electrode layers may be formedabove the two layers that become the fuse.

By the present invention, a small size fuse element can be formed overan insulating substrate using a TFT manufacturing process. Also, sincedeformation of a wiring does not occur as it does with a conventionalfuse element in which a junction is broken or melting is carried out,there is little effect on a wiring portion except the fuse element andcharacteristic degradation or reduction in yield can be prevented.Further, since a fuse memory element can only be written once, byapplying the present invention to an ID chip or the like, ahigh-security semiconductor device can be provided.

Embodiment Mode 2

In this embodiment mode, a mode is described in which a semiconductordevice capable of wireless communication, such as an IC tag, is mountedwith a fuse memory element to which the present invention is applied. Anexample of a structure of a semiconductor device of the presentinvention is described with reference to FIG. 3. A semiconductor device100 of the present invention includes an arithmetic processing circuit101, a storage circuit 102, an antenna 103, a power source circuit 104,a demodulation circuit 105, and a modulation circuit 106.

The arithmetic processing circuit 101 performs analysis of aninstruction, control of the storage circuit 102, output of data to betransmitted outside to the modulation circuit 106, and the like based ona signal input from the demodulation circuit 105.

The memory circuit 102 includes a circuit including a storage elementand a control circuit for performing writing and reading of data. In thememory circuit 102, at least an individual identification number of thesemiconductor device itself is stored. The individual identificationnumber is used for distinguishing the semiconductor device from othersemiconductor devices. In addition, the memory circuit 102 includes oneor more kinds of memories such as an organic memory, a DRAM (DynamicRandom Access Memory), an SRAM (Static Random Access Memory), a PROM(Programmable Read Only Memory), an EPROM (Electrically ProgrammableRead Only Memory), an EEPROM (Electrically Erasable Programmable ReadOnly Memory), and a flash memory. When the individual identificationnumber is written in a rewritable flash memory or the like, it is easilyrewritten and there is serious flaw in security. Therefore, a write-oncetype ROM is used for storing an individual identification number. Inthis embodiment mode, a fuse element to which the present invention isapplied can be used as the write-once type ROM.

The antenna 103 converts a carrier wave supplied from an antenna 107 ofa reader/writer into an AC signal. Also, load modulation is added by themodulation circuit 106. The power source circuit 104 generates powersource voltage using the AC signal converted by the antenna 103 andsupplies the power source voltage to each circuit.

The demodulation circuit 105 demodulates the AC signal converted by theantenna 103 and supplies the demodulated signal to the arithmeticprocessing circuit 101. The modulation circuit 106 adds load modulationto the antenna 103 based on a signal supplied from the arithmeticprocessing circuit 101.

The antenna 107 of the reader/writer receives the load modulation addedby the antenna 103 as a carrier wave. Also, the antenna 107 of thereader/writer transmits the carrier wave to the semiconductor device100. Note that a carrier wave is an electromagnetic wave that istransmitted and received by the antenna 107 of the reader/writer, andthe antenna 107 of the reader/writer receives a carrier wave that ismodulated by the modulation circuit 106.

A structure in which the storage circuit 102 is mounted with storageelements to which the present invention is applied, which are arrangedin a matrix form, is shown in FIG. 6. Note that in FIG. 6, although onlya fuse element of the present invention is used as the storage element,the present invention is not limited thereto. The storage circuit 102may include a first storage circuit using a fuse element for storingindividual identification information of the semiconductor device 100and a second storage circuit using a memory. By the storage circuit 102including for example an SRAM for the second storage circuit using amemory besides the fuse element, temporary storage of data generated inthe arithmetic processing circuit 101 becomes possible, and acharacteristic of the semiconductor device 100 is improved.

FIG. 6 shows an example of a structure of the storage circuit 102 inwhich storage elements of the present invention are arranged in a matrixform. The storage circuit 102 includes a memory cell array 1023 in whichmemory cells 1021 are arranged in a matrix form; a bit line drivercircuit 1024 including a column decoder 1025, a reading circuit 1026,and a selector 1027; a word line driver circuit 1029 including a rowdecoder 1030 and a level shifter 1031; and an interface 1028 thatinteracts with the outside including a writing circuit and the like.Note that the structure of the storage circuit 102 shown in FIG. 6 isone example. The storage circuit 102 may include another circuit such asa sense amplifier, an output circuit, a buffer, and the like, and thewriting circuit may be provided inside the bit line driver circuit.

The memory cell 1021 includes a first wiring forming a word line W_(y)(1≦y≦n), a second wiring forming a bit line B_(x) (1≦x≦m), a TFT 1032,and a storage element 1033. The storage element 1033 corresponds to thefuse element 114 described in Embodiment Mode 1.

Next, writing and reading operations of a memory cell of the presentinvention are described with reference to FIG. 5. Note that here, astate in which “1” is written in the memory cell is called a secondstate (insulated state), and a state in which “0” is written is called afirst state (conductive state).

First, an example of a circuit operation for writing “1” in the memorycell 1021 is described. A writing process is performed by selecting aword line W₀ of the memory cell 1021 and feeding a current to a bit lineB₀. In other words, a memory cell in which writing is desired isselected with the word line W₀, and voltage is applied that can make thestorage element 1033 transition from the first state (conductive state)to the second state (insulated state) and insulate the storage element1033 or make it have high resistance. For example, say that this voltageis 10 V. At this time, a TFT 502, a TFT 503, and a TFT 504 are turnedoff so that writing in a storage element 506, a storage element 507, anda storage element 508 in other memory cells is prevented. For example, aword line W₁ and a bit line B₁ may be 0 V (reference potential). Byapplying voltage to the bit line B₀ enough for the storage element 1033to transition from the first state to the second state while only theword line W₀ is selected, “1” can be written in the storage element1033.

Subsequently, an example of a reading process of the memory cell 1021 isdescribed. The reading process may differentiate between whether thestorage element 1033 in the memory cell 1021 is in the second state(insulated state) in which “1” is written or the first state (conductivestate) in which “0” is written. A case of reading whether the memorycell 1021 is in a state in which “0” is written or “1” is written isdescribed. The word line W₀ is selected to turn on the TFT 1032. Here, apredetermined voltage is applied to the bit line B₀ while the TFT 1032is termed on. Here, the predetermined voltage is 5 V. At this time, ifthe storage element 1033 is in the first state, that is, in a conductivestate, current flows to a wiring for grounding in the memory cell 1021,and voltage of the bit line B₀ becomes 0 V. On the other hand, if thestorage element 1033 is in the second state, that is, in an insulated(high resistance) state, current does not flow to the wiring forgrounding in the memory cell 1021, and voltage of the bit line B₀remains 5 V. In this manner, whether “0” or “1” is written can bedifferentiated by voltage of the bit line.

As described above, the fuse element of the present invention canperform a writing process and a reading process, but it can also be usedto manufacture a higher-security fuse memory. For example, in thisembodiment mode, voltage of a bit line when writing is set to be 10 Vand that when reading is set to be 5 V. If writing is to be performedonly during initialization, a structure may be that in which voltage ofthe bit line can be raised to 10 V only during initialization and thatwhich cannot be raised to 10 V after initialization. For example, thestructure may be that in which voltage can only be raised to 7 V. Acharge pump circuit or the like may be used for raising voltage.

Next, a manufacturing process of a semiconductor device of the presentinvention is described with reference to FIG. 2A. Note that althoughFIG. 2A only shows a cross-sectional diagram of a TFT portion and fuseelement portions manufactured by applying the present invention, thepresent invention is not limited thereto, and may include another layeras necessary.

As a substrate 200, a glass substrate which is a substrate having aninsulating property can be used. Alternatively, a plastic substrate,which is a flexible substrate, a quartz substrate, or the like, may beused. With a glass substrate, there is no limitation on its area orshape. Therefore, by using a rectangular glass substrate that has forexample one side of 1 m or longer as the substrate 200, productivity canbe dramatically improved. This point is a significant advantage whencompared to a case of using a circular monocrystalline siliconsubstrate. Also, when the substrate 200 is a plastic substrate, it iseasy to process it into a flexible form with excellent design since itis thin, light, and can be bent. Further, since it has an excellentshock resistance property and can be attached or embedded in a varietyof items, it can be utilized in a wide variety of fields. Also, when thesubstrate 200 is a plastic substrate, it is necessary to useheat-resistant plastic that can withstand treatment temperature of amanufacturing process. Preferably, after a peeling layer is providedover the glass substrate and a TFT is provided over the peeling layer,the TFT is peeled off and the peeled TFT is provided over the plasticsubstrate.

A first insulating layer 201 is formed over the substrate 200. The firstinsulating layer 201 prevents entrance of an impurity from the substrate200. The first insulating layer 201 is formed of a single layer orstacked layers of a layer containing an oxide of silicon or a nitride ofsilicon, by a sputtering method, a plasma CVD method, or the like. Anoxide material of silicon corresponds to a substance containing silicon(Si) and oxygen (O) such as silicon oxide, silicon oxide containingnitrogen (silicon oxynitride), or the like. A nitride material ofsilicon corresponds to a substance mainly containing silicon andnitrogen (N) such as silicon nitride, silicon nitride containing oxygen(silicon nitride oxide), or the like. Note that the insulating layer 201is not provided when it is not necessary. Here, the insulating layer 201is formed with silicon oxynitride.

Subsequently, a semiconductor layer 202 is formed over the firstinsulating layer 201. Silicon is used for the semiconductor layer 202.In forming the semiconductor layer 202, a semiconductor material gastypified by silane can be used. For the semiconductor layer 202, anamorphous semiconductor film formed by an LPCVD method, a plasma CVDmethod, a vapor growth method, or a sputtering method can be used.Further, a polycrystalline semiconductor film or a semi-amorphoussemiconductor (hereinafter referred to as “SAS”) film, that is anamorphous semiconductor film crystallized by light energy or heatenergy, or the like may be used, and the film thickness may be 25 to 200nm (preferably 50 to 150 nm). Note that SAS also includes amicrocrystalline semiconductor. Here, the semiconductor layer 202 isformed by patterning a polycrystalline semiconductor film crystallizedby laser irradiation.

Next, an impurity element is introduced to the semiconductor layer 202by an ion implantation method or the like. The impurity element to beintroduced is an impurity element having the opposite conductivity typefrom that of a TFT. That is, an impurity element imparting p-type isintroduced to an n-type TFT, and an impurity element imparting n-type isintroduced to a p-type TFT. For the impurity element imparting n-type,phosphorus (P), arsenic (As), or the like can be used. For the impurityelement imparting p-type, boron (B), aluminum (Al), gallium (Ga), or thelike can be used. This step is called channel doping. By performingchannel doping, the threshold of the TFT can be controlled.

Subsequently, a second insulating layer 203 is formed over thesemiconductor layer 202. The second insulating layer can be formed witha similar material to that of the first insulating layer. That is,silicon oxide, silicon oxynitride, silicon nitride oxide, siliconnitride, or the like may be formed by a sputtering method, a plasma CVDmethod, or the like. Here, the second insulating layer 203 is formed ofsilicon oxynitride.

Then, a first layer 204 is formed. The first layer 204 may be a singlelayer or stacked layers. When the first layer 204 is formed as a singlelayer, a film containing an element selected from titanium (Ti),tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt(Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium(Pd), osmium (Os), iridium (Ir), platinum (Pt), aluminum (Al), gold(Au), silver (Ag), copper (Cu), silicon (Si), and germanium (Ge); a filmcontaining an alloy material or compound material mainly containing theelement, or the like can be used. Here, the first layer 204 is formedsuch that tungsten (W) is stacked over tantalum (Ta) to have astacked-layer structure and patterned.

Next, a sidewall 205 is formed by performing dry etching after formingan insulating layer. For the insulating layer, an insulating layermainly containing silicon oxide is used. Alternatively, siliconoxynitride or silicon nitride oxide may be used instead of siliconoxide. A material and method used in forming the insulating layer aresimilar to those of the first insulating layer 201 and the secondinsulating layer 203. The sidewall 205 is formed by performing dryetching with respect to the insulating layer formed over an entiresurface. The sidewall 205 is an insulating layer formed over a side wallof the first layer 204.

Subsequently, an impurity is introduced to the semiconductor layer 202with the sidewall 205 formed. By introducing the impurity by an ionimplantation method with the existence of the sidewall 205, two regionswith different concentrations are formed in an impurity region of thesemiconductor layer 202. That is, the semiconductor layer 202 of aregion that overlaps with the sidewall 205 becomes a low-concentrationimpurity region 207 and the semiconductor layer 202 of a region thatdoes not overlap with the sidewall 205 becomes a high-concentrationimpurity region 208. Here for example, an n-type TFT can be formed byadding phosphorus (P) as an impurity element so as to be contained at aconcentration of about 5×10¹⁹ to 5×10²⁰/cm³. Also, an impurity elementimparting p-type may be added to form a p-type TFT. As the impurityelement imparting n-type, phosphorus (P), arsenic (As), or the like canbe used. As the impurity element imparting p-type, boron (B), aluminum(Al), gallium (Ga), or the like can be used. Note that a region thatoverlaps with the first layer becomes a channel forming region 206.

Further, although a case of forming an LDD region by introducing theimpurity element after forming the sidewall is described in thisembodiment mode, the low-concentration impurity region may be formed byintroducing (light doping) the impurity before forming the sidewall andthen introducing (heavy doping) the impurity again after forming thesidewall. In this case, during light doping, acceleration voltage or thelike of ions is controlled so that amount of impurity added is little,and during heavy doping, the impurity may be introduced under such anapproximate condition as under which the high-concentration impurityregion is formed. In the n-type TFT, the impurity imparting n-type isintroduced during both light doping and heavy doping.

Then, a third insulating layer 209 is formed. The third insulating layer209 is formed using similar materials to those of the first insulatinglayer 201 and the second insulating layer 203.

Next, a fourth insulating layer 210 is formed. The fourth insulatinglayer 210 is formed by a similar material and method to those of thefirst insulating layer 201 or the like; however, the fourth insulatinglayer 210 is more preferably formed of an organic material typified bypolyimide, acrylic, or the like, by a coating method or the like.

Subsequently, an opening is formed in the third insulating layer 209 andthe fourth insulating layer 210. The opening may be formed by a dryetching method under an etching condition appropriate for a material ofa layer to be opened. The etching is performed so as to expose thehigh-concentration impurity region 208 of the semiconductor layer 202. Asecond layer 211 is formed after forming the opening. The second layer211 may be formed using a similar material and method as those of thefirst layer 204.

Then, a fuse element is formed. First, a terminal electrode 212 of thefuse element is formed. The terminal electrode 212 of the fuse elementcan be formed in a similar manner to the first layer 204 or the like.Here, the terminal electrode 212 may be formed in a similar manner tothe second layer 211 or may be formed in the same layer as the secondlayer 211. Here, the terminal electrode 212 is formed using titanium.

Subsequently, a first fuse layer 213 and a second fuse layer 214 areformed. The first fuse layer 213 and the second fuse layer 214correspond to the first fuse layer 112 and the second fuse layer 113 inEmbodiment Mode 1. The first fuse layer 213 uses a conductive oxide, anda substance that becomes a precursor in forming an insulating oxide isused for the second fuse layer 214. Here, ITO is used for the first fuselayer 213 and aluminum is used for the second fuse layer 214. Bycontinuously forming the first fuse layer 213 and the second fuse layer214 to be stacked layers, a fuse element of the present invention can beformed. Also, their order of stacking may be reversed. That is, thesubstance that becomes a precursor in forming an insulating oxide may beused to form the first fuse layer 213 and the conductive oxide may beused to form the second fuse layer 214. However, it is preferable to usethe conductive oxide for the first fuse layer 213 and the substance thatbecomes a precursor in forming an insulating oxide for the second fuselayer 214.

In an element formed as described above in which the TFT and the fuseelement are formed over the same substrate, a desired fuse element canbe selected by the TFT to become insulating or high resistant. A portionof a circuit diagram of the TFT and fuse element of which amanufacturing method in this embodiment mode is described is shown inFIG. 5. In FIG. 5, fuse elements each provided with a TFT are arrangedin a matrix form. By having such a structure, a fuse memory canselectively become insulating or high resistant, using the TFT.

Note that the present invention is not limited to the foregoing. Forexample, as shown in FIG. 2B, the fuse element may be formed of the samelayer as the first layer that functions as a gate electrode of the TFT,in the same step. Alternatively, the fuse element may be formed of thesame layer as the second layer that functions as a source electrode anddrain electrode of the TFT, in the same step, as shown in FIG. 2C.

In the above manner, by the present invention, a small-size fuse elementcan be manufactured over an insulating substrate using a TFTmanufacturing process. Also, since deformation of a wiring does notoccur as it does with a conventional fuse in which a junction is brokenor melting is performed, there is no effect on a wiring portion except afuse portion, and degradation of a characteristic or reduction in yieldcan be prevented. Further, since a memory using a fuse element can onlybe written once, by using the present invention in a storage circuitsuch as an ID chip, a high-security semiconductor device can beprovided.

Embodiment Mode 3

The semiconductor device 100 to which the present invention is appliedcan be used for a variety of items and systems by utilizing a functionof transmitting and receiving an electromagnetic wave. As the items, thefollowing are given: keys (see FIG. 7A), paper money, coins, securities,bearer bonds, certificates (such as a driver's license or a resident'scard, see FIG. 7B), books, containers (such as a Petri dish, see FIG.7C), packaging containers (such as wrapping paper or bottles, see FIGS.7E and 7F), recording media (such as a disk or video tape), vehicles(such as a bicycle), personal accessories (such as shoes or eyeglasses,see FIG. 7D), food, clothing, livingware, electronic appliances (such asa liquid crystal display device, an EL display device, a televisiondevice, or a portable terminal), or the like. The semiconductor deviceof the present invention is fixed to items of a variety of forms such asthose above by being attached or embedded on a surface. Further, asystem refers to a goods management system, an authentication functionsystem, a distribution system, or the like, and by using thesemiconductor device of the present invention, the system can be moresophisticated, multifunctional, and high-value added. This embodimentmode can be freely combined with the other embodiment modes.

This application is based on Japanese Patent Application serial no.2006-188417 filed in Japan Patent Office on Jul. 7, 2006, the entirecontents of which are hereby incorporated by reference.

1. A fuse element comprising: a first layer comprising a compoundcontaining oxygen; and a second layer having a conductive property,wherein the first layer is at least partially in contact with the secondlayer, and wherein a part of the second layer is capable of beingoxidized with heat by feeding current to at least one of the first layerand the second layer so that an electrical resistance of the secondlayer is high.
 2. The fuse element according to claim 1, wherein thecompound containing oxygen is oxide.
 3. The fuse element according toclaim 1, wherein the compound containing oxygen is oxynitride.
 4. Thefuse element according to claim 1, wherein the first layer has aconductive property.
 5. The fuse element according to claim 1, whereinthe first layer includes at least one selected from the group consistingof indium tin oxide, indium tin oxide containing silicon oxide, andindium oxide-zinc oxide.
 6. The fuse element according to claim 1,wherein the second layer includes at least one selected from the groupconsisting of aluminum, bismuth and tin.
 7. The fuse element accordingto claim 1, wherein the first layer mainly contains indium tin oxide;and wherein the second layer mainly contains aluminum.
 8. Asemiconductor device including the fuse element according to claim
 1. 9.A storage circuit including the fuse element according to claim
 1. 10.The storage circuit according to claim 9, further comprising a pluralityof the fuse elements, wherein the plurality of the fuse elements arearranged in a matrix form.
 11. The storage circuit according to claim10, wherein a transistor is connected to one of the fuse elements.
 12. Asemiconductor device including the storage circuit according to claim 9.13. A fuse element comprising: a first layer comprising a compoundcontaining nitrogen; and a second layer having a conductive property,wherein the first layer is at least partially in contact with the secondlayer, and wherein a part of the second layer is capable of beingnitrided with heat by feeding current to at least one of the first layerand the second layer so that an electrical resistance of the secondlayer is high.
 14. The fuse element according to claim 13, wherein thecompound containing nitrogen is nitride.
 15. The fuse element accordingto claim 13, wherein the compound containing nitrogen is oxynitride. 16.The fuse element according to claim 13, wherein the first layer has aconductive property.
 17. The fuse element according to claim 13, whereinthe second layer includes at least one selected from the groupconsisting of aluminum, bismuth and tin.
 18. A semiconductor deviceincluding the fuse element according to claim
 13. 19. A storage circuitincluding the fuse element according to claim
 13. 20. The storagecircuit according to claim 19, further comprising a plurality of thefuse elements, wherein the plurality of the fuse elements are arrangedin a matrix form.
 21. The storage circuit according to claim 20, whereina transistor is connected to one of the fuse elements.
 22. Asemiconductor device including the storage circuit according to claim19.
 23. A fuse element comprising: a first layer comprising a compoundcontaining oxygen; a second layer having a conductive property; and athird layer partially in contact with the first layer, wherein thesecond layer is at least partially in contact with the first layer,wherein the third layer has a conductive property, wherein the thirdlayer comprises a first electrode and a second electrode, and wherein apart of the second layer is capable of being oxidized with heat byfeeding current between the first electrode and the second electrode sothat an electrical resistance of the second layer is high.
 24. The fuseelement according to claim 23, wherein the compound containing oxygen isoxide.
 25. The fuse element according to claim 23, wherein the compoundcontaining oxygen is oxynitride.
 26. The fuse element according to claim23, wherein the first layer has a conductive property.
 27. The fuseelement according to claim 23, wherein the first layer includes at leastone selected from the group consisting of indium tin oxide, indium tinoxide containing silicon oxide, and indium oxide-zinc oxide.
 28. Thefuse element according to claim 23, wherein the second layer includes atleast one selected from the group consisting of aluminum, bismuth andtin.
 29. The fuse element according to claim 23, wherein the first layermainly contains indium tin oxide; and wherein the second layer mainlycontains aluminum.
 30. A semiconductor device including the fuse elementaccording to claim
 23. 31. A storage circuit including the fuse elementaccording to claim
 23. 32. The storage circuit according to claim 31,further comprising a plurality of the fuse elements, wherein theplurality of the fuse elements are arranged in a matrix form.
 33. Thestorage circuit according to claim 32, wherein a transistor is connectedto one of the fuse elements.
 34. A semiconductor device including thestorage circuit according to claim
 31. 35. A fuse element comprising: afirst layer comprising a compound containing nitrogen; a second layerhaving a conductive property; and a third layer partially in contactwith the first layer, wherein the second layer is at least partially incontact with the first layer, wherein the third layer has a conductiveproperty, wherein the third layer comprises a first electrode and asecond electrode, and wherein a part of the second layer is capable ofbeing nitrided with heat by feeding current between the first electrodeand the second electrode so that an electrical resistance of the secondlayer is high.
 36. The fuse element according to claim 35, wherein thecompound containing nitrogen is nitride.
 37. The fuse element accordingto claim 35, wherein the compound containing nitrogen is oxynitride. 38.The fuse element according to claim 35, wherein the first layer has aconductive property.
 39. The fuse element according to claim 35, whereinthe second layer includes at least one selected from the groupconsisting of aluminum, bismuth and tin.
 40. A semiconductor deviceincluding the fuse element according to claim
 35. 41. A storage circuitincluding the fuse element according to claim
 35. 42. The storagecircuit according to claim 41, further comprising a plurality of thefuse elements, wherein the plurality of the fuse elements are arrangedin a matrix form.
 43. The storage circuit according to claim 42, whereina transistor is connected to one of the fuse elements.
 44. Asemiconductor device including the storage circuit according to claim41.
 45. A fuse element comprising: a first layer comprising a compoundcontaining oxygen; a second layer having a conductive property; and athird layer partially in contact with the second layer, wherein thesecond layer is at least partially in contact with the first layer,wherein the third layer has a conductive property, wherein the thirdlayer comprises a first electrode and a second electrode, and wherein apart of the second layer is capable of being oxidized with heat byfeeding current between the first electrode and the second electrode sothat an electrical resistance of the second layer is high.
 46. The fuseelement according to claim 45, wherein the compound containing oxygen isoxide.
 47. The fuse element according to claim 45, wherein the compoundcontaining oxygen is oxynitride.
 48. The fuse element according to claim45, wherein the first layer has a conductive property.
 49. The fuseelement according to claim 45, wherein the first layer includes at leastone selected from the group consisting of indium tin oxide, indium tinoxide containing silicon oxide, and indium oxide-zinc oxide.
 50. Thefuse element according to claim 45, wherein the second layer includes atleast one selected from the group consisting of aluminum, bismuth andtin.
 51. The fuse element according to claim 45, wherein the first layermainly contains indium tin oxide; and wherein the second layer mainlycontains aluminum.
 52. A semiconductor device including the fuse elementaccording to claim
 45. 53. A storage circuit including the fuse elementaccording to claim
 45. 54. The storage circuit according to claim 53,further comprising a plurality of the fuse elements, wherein theplurality of the fuse elements are arranged in a matrix form.
 55. Thestorage circuit according to claim 54, wherein a transistor is connectedto one of the fuse elements.
 56. A semiconductor device including thestorage circuit according to claim
 53. 57. A fuse element comprising: afirst layer comprising a compound containing nitrogen; a second layerhaving a conductive property; and a third layer partially in contactwith the second layer, wherein the second layer is at least partially incontact with the first layer, wherein the third layer has a conductiveproperty, wherein the third layer comprises a first electrode and asecond electrode, and wherein a part of the second layer is capable ofbeing nitrided with heat by feeding current between the first electrodeand the second electrode so that an electrical resistance of the secondlayer is high.
 58. The fuse element according to claim 57, wherein thecompound containing nitrogen is nitride.
 59. The fuse element accordingto claim 57, wherein the compound containing nitrogen is oxynitride. 60.The fuse element according to claim 57, wherein the first layer has aconductive property.
 61. The fuse element according to claim 57, whereinthe second layer includes at least one selected from the groupconsisting of aluminum, bismuth and tin.
 62. A semiconductor deviceincluding the fuse element according to claim
 57. 63. A storage circuitincluding the fuse element according to claim
 57. 64. The storagecircuit according to claim 63, further comprising a plurality of thefuse elements, wherein the plurality of the fuse elements are arrangedin a matrix form.
 65. The storage circuit according to claim 64, whereina transistor is connected to one of the fuse elements.
 66. Asemiconductor device including the storage circuit according to claim63.